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| CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications. Applications: * * * * * Bluetooth Class 1 Home RF Cordless Phones IEEE 802.11b ISM-band Spread Spectrum Package Outline: Features: * 2-stage Bluetooth InGaP HBT power amplifier * Single voltage supply * Wide operating voltage range 2.0 - 5.5 V * POUT = 22.5 dBm at VC = 3.2 V * Overall power added efficiency ( PAE ) typically 50% * Analog power control with four power steps * High PAE at low-power mode * High harmonic suppression typ. 35 dBc * Easy external matching concept * Thin Small Leadless Package (A = 2.6mm2) Pin Configuration: 1: Vc1 2: RFin 3: NC 4: Vcntrl1 5: Vcntrl2 6: Vc2 7 (paddle): GND For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 1/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Absolute Maximum Ratings Parameter Symbol min. Max. Supply Voltage Max. Control Voltage Max. Current Stage 1 Max. Current Stage 2 Max. Total Power Dissipation ) Max. RF Input Power ) Channel Temperature 1) Storage Temperature 1 2 Limit Values max. 5.5 3.2 40 160 0.5 +10 150 - 55 150 Unit VCC,MAX VCTR,MAX IC1,MAX IC2,MAX 1 0 0 0 0 V V mA mA W dBm C C PTOT PIN,MAX TCh TStg 2 ) Thermal resistance between junction and pad 7 ( = heatsink ): RTHCH = 100 K/W. ) No RF input signal should be applied at turn on of DC Power. An output VSWR of 1:1 is assumed. Typical Electrical Characteristics in CGB241 Reference Design TA = 25 C; VCC = 3.2 V; f = 2.4 ... 2.5 GHz; ZIN = ZOUT = 50 Ohms Parameter Symbol Limit Values min Supply Current Small-Signal Operation Power Gain Small-Signal Operation Output Power Power Step 1 Supply Current Power Step 1 Power Added Efficiency Power Step 1 Output Power Power Step 2 Supply Current Power Step 2 Power Added Efficiency Power Step 2 ICC,SS GSS POUT,1 ICC,1 PAE 1 POUT,2 ICC,2 PAE 2 24 Unit Test Conditions typ 120 26 3 15 7 12 30 15 max 150 mA dB dBm mA % dBm mA % PIN = - 10 dBm VCTR = 2.5 V PIN = - 10 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 1.15 V PIN = + 3 dBm VCTR = 1.15 V PIN = + 3 dBm VCTR = 1.15 V PIN = + 3 dBm VCTR = 1.3 V PIN = + 3 dBm VCTR = 1.3 V PIN = + 3 dBm VCTR = 1.3 V For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 2/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Electrical Characteristics in CGB241 Reference Design (cont.) Parameter Symbol Limit Values Min Output Power Power Step 3 Supply Current Power Step 3 Power Added Efficiency Power Step 3 Output Power Power Step 4 Supply Current Power Step 4 Power Added Efficiency Power Step 4 2nd Harm. Suppression Power Step 4 Turn-Off Current POUT,3 ICC,3 PAE 3 POUT,4 ICC,4 PAE 4 h2 ICC,OFF 40 22.0 Unit Test Conditions typ 17 52 30 22.5 130 50 - 35 0.5 max dBm mA % dBm 170 -10 mA % dBc uA PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V VCC = n/c VCTR < -2.0 V No RF Input PIN = + 3 dBm VCTR = 0 V PIN = + 3 dBm VCC = 3.2 V VCTR = 2.5 V ZIN = 50 Ohms PIN = + 5 dBm VCC = 4.8 V VCTR = 2.5 V ZIN = 50 Ohms Off-State Isolation Stable Load VSWR (no oscillation for any phase of load) Maximum Load VSWR (no damage to device) allowed for 10s RF must not be applied before DC is turned on ! S21,0 VSWR 26 6 dB VSWR 6 For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 3/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Typical Device Performance PAE versus Vcc Vcntrl: 2.5V; Pin: +3 dBm @ 2.45 GHz Pout versus Vcc Vcntrl: 2.5V; Pin: +3 dBm @ 2.45 GHz 55 27 50 45 40 35 30 25 20 2 2.5 3 3.5 4 4.5 5 25 Pout (dBm) PAE (%) 23 21 19 2 2.5 3 3.5 4 4.5 5 Vcc (V) Vcc (V) Supply Current ICC = f ( VCTR ) Icc vs Vctrl Pin: 2.45GHz / +3dBm Vcc :3.2V 180 160 140 Output Power POUT = f ( VCTR ) Pout vs Vctrl Pin: 2.45 GHz / +3dBm 25 Vcc :3.2V 20 Pout (dBm) Icc (mA) 120 100 80 60 40 20 0 1 1.5 2 2.5 3 Vcc :2.8V 15 Vcc :2.8V 10 5 0 1 1.5 2 2.5 3 Vctrl (V) Vctrl(V) For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 4/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Output Power Compression POUT = f ( PIN ) Pout vs Pin Vctrl:2.5V, f(IN) :2.45GHz Vcc :3.2V 25.0 20.0 Pout (dBm) Vcc :2.8V 15.0 10.0 5.0 -20 -15 -10 -5 0 5 Pin (dBm) For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 5/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Pinning Figure 1 Pad 1 2 3 4 5 6 7 CGB241 Outline: SLIM-7 Package Symbol VC1 RFIN NC VCTR1 VCTR2 VC2 GND Function Supply voltage of 1st stage / interstage match RF input No connection; It is recommended to ground this pad as short as possible e.g. by a via under the pad. Control voltage 1st stage Control voltage 2nd stage Supply voltage of 2nd stage / RF output RF and DC ground (pad located on backside of package) Heatsink. Thermal resistance between junction - pad 7: RTHCH = 100 K/W. Functional Diagram (1) Vc1 (2) RFin (6) Vc2 (7) Gnd (4) Vctr1 (5) Vctr2 Figure 2 CGB241 Functional Diagram pg. 6/14 For further information please visit www.triquint.com Rev. A; November 14th, 2005. CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Application Note 1: CGB241 Reference Design Vcc R1 C5 TRL2 CGB241 C1 RF In C4 TRL1 1 2 3 7 6 5 4 C6 L1 TRL3 C2 RF Out C3 C7 Vctr Figure 3 Part C1 C2 C3 ) C4 C5 C6 C7 L1 R1 TRL1 TRL2 TRL3 4 4 Schematic of CGB241 reference design. Value 22 pF 22 pF 1.5 pF 2.2 pF 10 pF 1 F 1 nF 22 nH 10 R Type Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Cer. Capacitor Inductor Resistor Microstrip Line Microstrip Line Microstrip Line Outline 0402 0402 0603 0402 0402 0603 0402 0603 0402 Source Murata COG Murata COG AVX ACCU-P Murata COG Murata COG Murata X7R Murata X7R Toko Mira Part No. 06035J1R5BBT LL1608-FS FR4 substrate; h = 0,2 mm; w = 0,32 mm FR4 substrate; h = 0,2 mm; w = 0,32 mm FR4 substrate; h = 0,2 mm; w = 0,32 mm ) Cost optimization might take place by using lower-Q AVX-CU capacitors instead of the AccuP version. This will lead to better h2 performance, however resulting in a loss of about 2% PAE. Line length l is the total distance from the corner of tuning capacitor to the corner of MMIC's package. Length of bend structures measured in the middle of the corresponding conductor. For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 7/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier TriQuint Semiconductor, Inc. R 1 C5 C6 L 1 C1 C 4 CGB 241 C 3 C2 C7 White Dots" = Ground Vias RF In (SMA) RF Out (SMA) Figure 4 Notes: Layout of CGB241 reference design. Vc1 and Vc2 are connected together on the PCB. Vctr1 and Vctr2 are connected together on the PCB. For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 8/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Package Outline of SLIM-7 Package For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 9/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Part Marking: White Ink or Laser Mark; XXXX = last 4 digits of lot code. Product Label: 10 9 8 6 7 For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 10/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Tape and Reel Information: PART CAVITY SYMBOL SIZE (in) SIZE (mm) LENGTH A0 0.062 1.57 WIDTH B0 0.087 2.21 DEPTH K0 0.023 0.59 PITCH P1 0.157 4.00 DISTANCE CAVITY TO PERFORATION P2 0.079 2.00 BETWEEN LENGTH DIRECTION CENTERLINE CAVITY TO PERFORATION F 0.138 3.50 WIDTH DIRECTION COVER TAPE WIDTH C 0.213 5.40 CARRIER TAPE WIDTH W 0.315 8.00 FEATURE For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 11/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Carton Label: For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 12/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Packing List Label: For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 13/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Ordering Information: Type CGB241 Marking XXXX Package SLIM-7 ESD: Electrostatic discharge sensitive device Observe handling precautions! Moisture: The CGB241 is rated Moisture Sensitivity Level 1 at 260C per JEDEC Standard IPC/JEDEC J-STD-020. RoHS: The CGB241 is compliant with RoHS Directive (Restrictions on the use of certain Hazardous Substances in Electrical and Electronic Equipment). Additional Information For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info_wireless@tqs.com Tel: (503) 615-9000 Fax: (503) 615-8902 For technical questions and additional information on specific applications: Email: info_wireless@tqs.com The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright (c) 2003 TriQuint Semiconductor, Inc. All rights reserved. Revision 1.4- ,December 12th, 2003 For additional information and latest specifications, see our website: www.triquint.com For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 14/14 |
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